型号:

MT46V64M4P-6T:GTR

RoHS:无铅 / 符合
制造商:Micron Technology Inc描述:IC DDR SDRAM 256MBIT 6NS 66TSOP
详细参数
数值
产品分类 集成电路 (IC) >> 存储器
MT46V64M4P-6T:GTR PDF
标准包装 1,000
系列 -
格式 - 存储器 RAM
存储器类型 DDR SDRAM
存储容量 256M(64Mx4)
速度 6ns
接口 并联
电源电压 2.3 V ~ 2.7 V
工作温度 0°C ~ 70°C
封装/外壳 66-TSSOP(0.400",10.16mm 宽)
供应商设备封装 66-TSOP
包装 带卷 (TR)
相关参数
B76004D4779M40K14 Kemet CAP TANT 470UF 4V 20% 2917
T95X685K016ESAL Vishay Sprague CAP TANT 6.8UF 16V 10% 2910
GEC05DTEI Sullins Connector Solutions CONN EDGECARD 10POS .100 EYELET
K2000GRP Littelfuse Inc SIDAC 190-215VBO 1A DO-15X
396-072-522-202 EDAC Inc CARD EDGE 72POS DL .125X.250 BLK
R0.25S-2412 Recom Power Inc CONV DC/DC 0.25W 24V IN 12V OUT
T496D106M025AS Kemet CAP TANT 10UF 25V 20% 2917
395-072-521-202 EDAC Inc CARD EDGE 72POS DL .100X.200 BLK
T495C107K006ATE075 Kemet CAP TANT 100UF 6.3V 10% 2312
MLK1005S4N7S TDK Corporation INDUCTOR MULTILAYER 4.7NH 0402
T495C107K006ATE075 Kemet CAP TANT 100UF 6.3V 10% 2312
MT46V64M4BG-6:GTR Micron Technology Inc IC DDR SDRAM 256MBIT 6NS 60FBGA
T95X475M025ESAL Vishay Sprague CAP TANT 4.7UF 25V 20% 2910
GCC05DRYH-S734 Sullins Connector Solutions CONN EDGECARD 10POS DIP .100 SLD
T520D227M010ASE018 Kemet CAP TANT 220UF 10V 20% 2917
T83C105K050EZZL Vishay Sprague CAP TANT 1UF 50V 10% 2312
T495C107K006ATE075 Kemet CAP TANT 100UF 6.3V 10% 2312
R0.25S-2409 Recom Power Inc CONV DC/DC 0.25W 24V IN 9V OUT
FCSP05H40TR Vishay Semiconductors DIODE SCHOTTKY 40V 0.5A FLIPKY
395-072-521-201 EDAC Inc CARD EDGE 72POS DL .100X.200 BLK